Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
6.73 x 2.38 x 6.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
-100 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
6 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
Frequency - Transition:
3MHz
title:
MJD42C1G
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 600mA, 6A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK
Packaging:
Tube
Power - Max:
1.75 W
Base Product Number:
MJD42
ECCN:
EAR99
