onsemi KSC5502DTTU
Product Information
Minimum DC Current Gain:
12
Transistor Type:
NPN
Dimensions:
10.67 x 4.7 x 9.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
118.16 W
Maximum Collector Emitter Voltage:
600 V
Maximum Emitter Base Voltage:
12 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
600 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
4 @ 1A, 1V
edacadModel:
KSC5502DTTU Models
Frequency - Transition:
11MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 200mA, 1A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1954712
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Power - Max:
50 W
Base Product Number:
KSC5502
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with KSC5502DTTU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi KSC5502DTTU. You can also check on our website or by contacting our customer support team for further order details on onsemi KSC5502DTTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21525561 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21525561.
Yes. We ship KSC5502DTTU Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is KSC5502DTTU. It features up to 12 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.67 x 4.7 x 9.4mm. The product is available in through hole configuration. Provides up to 118.16 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It features a 12 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 600 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 4 @ 1a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 11mhz. The 1.5v @ 200ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. In addition, 100µa is the maximum current at collector cutoff. to-220-3 is the supplier device package value. The maximum power of the product is 50 w. Moreover, it corresponds to ksc5502, a base product number of the product. The product is designated with the ear99 code number.
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