onsemi BDV65BG
Product Information
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 5A
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
125 W
Base Product Number:
BDV65
ECCN:
EAR99
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FAQs
Yes. You can also search BDV65BG on website for other similar products.
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You can order onsemi brand products with BDV65BG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi BDV65BG. You can also check on our website or by contacting our customer support team for further order details on onsemi BDV65BG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21507138 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21507138.
Yes. We ship BDV65BG Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is BDV65BG. The transistor is a npn type. The given dimensions of the product include 10.53 x 4.83 x 15.75mm. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. Additionally, it has 100 v dc maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-218. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 10 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Furthermore, 1000 @ 5a, 4v is the minimum DC current gain at given voltage. The 2v @ 20ma, 5a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1ma is the maximum current at collector cutoff. to-247-3 is the supplier device package value. The maximum power of the product is 125 w. Moreover, it corresponds to bdv65, a base product number of the product. The product is designated with the ear99 code number.
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