onsemi BD237G
Product Information
Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Voltage:
80 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1A, 2V
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
13 Weeks
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
25 W
Base Product Number:
BD237
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with BD237G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi BD237G. You can also check on our website or by contacting our customer support team for further order details on onsemi BD237G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21506991 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21506991.
Yes. We ship BD237G Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is BD237G. It features up to 40 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 7.8 x 3 x 11.1mm. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. Whereas features a 80 v dc of collector emitter voltage (max). It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-225. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 25 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 600mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. It has a long 13 weeks standard lead time. In addition, 100µa (icbo) is the maximum current at collector cutoff. to-126 is the supplier device package value. The maximum power of the product is 25 w. Moreover, it corresponds to bd237, a base product number of the product. The product is designated with the ear99 code number.
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