Minimum DC Current Gain:
100, 160
Transistor Type:
NPN
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Base Voltage:
160 V
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body, Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 200mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
19 Weeks
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
900 mW
Base Product Number:
KSC2383
ECCN:
EAR99
