Transistor Polarity:
NPN
Maximum Transition Frequency ft:
100MHz
Width:
4.19 mm
Maximum Collector Emitter Voltage Vceo:
160V
Automotive Standard:
No
Transistor Configuration:
Single
Maximum Collector Base Voltage VCBO:
180V
Maximum DC Collector Current Idc:
600mA
Package Type:
TO-92
Minimum DC Current Gain hFE:
30
Product Type:
Transistor
Maximum Operating Temperature:
150°C
Length:
5.2mm
Standards/Approvals:
No
Maximum Emitter Base Voltage VEBO:
6V
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
625mW
Series:
2N5551
Height:
21.77mm
Minimum Operating Temperature:
-55°C
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
2N5551TA Models
edacadModelUrl:
/en/models/973959
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
625 mW
Base Product Number:
2N5551
ECCN:
EAR99
