onsemi SS8550DBU PNP Transistor, 1.5 A, 25 V, 3-Pin TO-92
Product Information
Minimum DC Current Gain:
120, 160
Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
-25 V
Maximum Operating Frequency:
200 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
-1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
edacadModel:
SS8550DBU Models
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1047327
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
11 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
1 W
Base Product Number:
SS8550
ECCN:
EAR99
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FAQs
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Yes. We ship SS8550DBU Internationally to many countries around the world.
This is PNP Transistor 1.5 A 25 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is SS8550DBU. It features up to 120, 160 of minimum DC current gain. The transistor is a pnp type. Additionally, it has -40 v maximum collector base voltage. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. Whereas features a -25 v of collector emitter voltage (max). It carries 200 mhz of maximum operating frequency. It features a -6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -1.5 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 1.5 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 25 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 160 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 500mv @ 80ma, 800ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. It has a long 11 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 1 w. Moreover, it corresponds to ss8550, a base product number of the product. The product is designated with the ear99 code number.
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