onsemi MJE3055TG NPN Transistor, 10 A, 60 V, 3-Pin TO-220AB
Product Information
Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Base Voltage:
70 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
2 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
edacadModel:
MJE3055TG Models
Frequency - Transition:
2MHz
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919511
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
700µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
75 W
Base Product Number:
MJE3055
ECCN:
EAR99
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This is NPN Transistor 10 A 60 V 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is MJE3055TG. It features up to 20 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 9.28 x 10.28 x 4.82mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. Additionally, it has 70 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It carries 2 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 10 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 2mhz. The 8v @ 3.3a, 10a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 14 weeks standard lead time. In addition, 700µa is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 75 w. Moreover, it corresponds to mje3055, a base product number of the product. The product is designated with the ear99 code number.
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