Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
11.04 x 7.74 x 2.66mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.25 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
BD139G Models
edacadModelUrl:
/en/models/918364
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
7 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Packaging:
Bulk
Power - Max:
12.5 W
Base Product Number:
BD139
ECCN:
EAR99
