Minimum DC Current Gain:
400
Transistor Type:
NPN
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Base Voltage:
25 V dc
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
4.5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 100µA, 5V
edacadModel:
MMBT5089LT1G Models
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1mA, 10mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919612
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
300 mW
Base Product Number:
MMBT5089
ECCN:
EAR99
This is NPN Transistor 50 mA 30 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is MMBT5089LT1G. It features up to 400 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 3.04 x 2.64 x 1.11mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. Additionally, it has 25 v dc maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). It carries 20 mhz of maximum operating frequency. It features a 4.5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 25 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 400 @ 100µa, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 500mv @ 1ma, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 50na (icbo) is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 300 mw. Moreover, it corresponds to mmbt5089, a base product number of the product. The product is designated with the ear99 code number.
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