Minimum DC Current Gain:
200
Transistor Type:
NPN/PNP
Dimensions:
5 x 4 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
783 mW
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-7 V, 6 V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
Current - Collector (Ic) (Max):
3A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
40V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1A, 2V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
NSS40302PDR2G Models
edacadModelUrl:
/en/models/1973725
Manufacturer:
onsemi
Transistor Type:
1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic:
115mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
653mW
Base Product Number:
NSS40302
ECCN:
EAR99
