onsemi KSC1008CYTA NPN Transistor, 700 mA, 60 V, 3-Pin TO-92
Product Information
Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
4.7 x 3.93 x 4.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
8 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
700 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
700 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 50mA, 2V
edacadModel:
KSC1008CYTA Models
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1047348
Transistor Type:
NPN
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
8 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
800 mW
Base Product Number:
KSC1008
ECCN:
EAR99
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Yes. We ship KSC1008CYTA Internationally to many countries around the world.
This is NPN Transistor 700 mA 60 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is KSC1008CYTA. It features up to 120 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 4.7 x 3.93 x 4.7mm. The product is available in through hole configuration. Provides up to 800 mw maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 8 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 700 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 700 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 120 @ 50ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 400mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in cut tape (ct) package . Its typical moisture sensitivity level is not applicable. It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to ksc1008, a base product number of the product. The product is designated with the ear99 code number.
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