Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
4.7 x 3.93 x 4.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
8 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
700 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
700 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 50mA, 2V
Frequency - Transition:
50MHz
title:
KSC1008CYTA
REACH Status:
REACH Unaffected
edacadModel:
KSC1008CYTA Models
edacadModelUrl:
/en/models/1047348
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
800 mW
Base Product Number:
KSC1008
ECCN:
EAR99
