onsemi 2N6520TA PNP Transistor, 500 mA, 350 V, 3-Pin TO-92
Product Information
Minimum DC Current Gain:
30
Transistor Type:
PNP
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
-350 V
Maximum Collector Emitter Voltage:
-350 V
Maximum Operating Frequency:
200 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
-500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
350 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
edacadModel:
2N6520TA Models
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/965851
Transistor Type:
PNP
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
21 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N6520
ECCN:
EAR99
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This is PNP Transistor 500 mA 350 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is 2N6520TA. It features up to 30 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Additionally, it has -350 v maximum collector base voltage. Whereas features a -350 v of collector emitter voltage (max). It carries 200 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -500 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 350 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 20 @ 50ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1v @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in cut tape (ct) package . Its typical moisture sensitivity level is not applicable. It has a long 21 weeks standard lead time. In addition, 50na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n6520, a base product number of the product. The product is designated with the ear99 code number.
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