Minimum DC Current Gain:
33
Transistor Type:
NPN
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Typical Resistor Ratio:
0.22
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
2.2 kΩ
Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 10mA, 5V
edacadModel:
FJV3115RMTF Models
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1047735
Transistor Type:
NPN - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Power - Max:
200 mW
Base Product Number:
FJV311
ECCN:
EAR99
This is ON Semiconductor NPN Digital Transistor 100 mA 50 V 2.2 kΩ Ratio Of 0.22 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FJV3115RMTF. It features up to 33 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2.92 x 1.3 x 0.93mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It features a 10 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. In addition, it has a typical 0.22 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 2.2 kω input resistor . Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 33 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. sot-23-3 is the supplier device package value. The maximum power of the product is 200 mw. Moreover, it corresponds to fjv311, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.