Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
350 mW
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
25 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
3 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
-
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
edacadModel:
KSP10TA Models
Noise Figure (dB Typ @ f):
-
Frequency - Transition:
650MHz
REACH Status:
REACH Unaffected
Gain:
-
edacadModelUrl:
/en/models/1047204
Transistor Type:
NPN
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
8 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
350mW
Base Product Number:
KSP10
ECCN:
EAR99
