onsemi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P

FJA4310OTU onsemi  NPN Transistor, 10 A, 140 V, 3-Pin TO-3P
FJA4310OTU
FJA4310OTU
ET21466461
onsemi

Product Information

Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Base Voltage:
200 V
Maximum Collector Emitter Voltage:
140 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
140 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 3A, 4V
edacadModel:
FJA4310OTU Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 500mA, 5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1056262
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Power - Max:
100 W
Base Product Number:
FJA4310
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 10 A 140 V 3-Pin TO-3P manufactured by onsemi. The manufacturer part number is FJA4310OTU. It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. Additionally, it has 200 v maximum collector base voltage. Whereas features a 140 v of collector emitter voltage (max). It carries 30 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-3p. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 10 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 140 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 70 @ 3a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 500mv @ 500ma, 5a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. In addition, 10µa (icbo) is the maximum current at collector cutoff. to-3p is the supplier device package value. The maximum power of the product is 100 w. Moreover, it corresponds to fja4310, a base product number of the product. The product is designated with the ear99 code number.

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FJA4310, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Assembly Site Transfer 06/Apr/2015(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 30/Sep/2022(PCN Obsolescence/ EOL)
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FJA4310(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of onsemi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P. You can also check on our website or by contacting our customer support team for further order details on onsemi FJA4310OTU NPN Transistor, 10 A, 140 V, 3-Pin TO-3P.
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