onsemi NJW3281G NPN Transistor, 15 A, 250 V, 3-Pin TO-3P
Product Information
Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Base Voltage:
250 V dc
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 3A, 5V
edacadModel:
NJW3281G Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 800mA, 8A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1853553
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
50µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P-3L
Power - Max:
200 W
Base Product Number:
NJW3281
ECCN:
EAR99
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Yes. We ship NJW3281G Internationally to many countries around the world.
This is NPN Transistor 15 A 250 V 3-Pin TO-3P manufactured by onsemi. The manufacturer part number is NJW3281G. The transistor is a npn type. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. Additionally, it has 250 v dc maximum collector base voltage. Whereas features a 250 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-3p. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 250 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 75 @ 3a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 600mv @ 800ma, 8a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 50µa (icbo) is the maximum current at collector cutoff. to-3p-3l is the supplier device package value. The maximum power of the product is 200 w. Moreover, it corresponds to njw3281, a base product number of the product. The product is designated with the ear99 code number.
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