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onsemi NSVMUN531335DW1T1G Dual NPN + PNP Digital Transistor, 50 V, 6-Pin SOT-363

NSVMUN531335DW1T1G onsemi  Dual NPN + PNP Digital Transistor, 50 V, 6-Pin SOT-363
NSVMUN531335DW1T1G
NSVMUN531335DW1T1G
onsemi

Product Information

Transistor Type:
NPN/PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Resistor - Base (R1):
47kOhms, 2.2kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
edacadModel:
NSVMUN531335DW1T1G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/6684817
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
187mW
Base Product Number:
NSVMUN531335
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual NPN + PNP Digital Transistor 50 V 6-Pin SOT-363 manufactured by onsemi. The manufacturer part number is NSVMUN531335DW1T1G. The transistor is a npn/pnp type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 385 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. Resistor - Base - 47kohms, 2.2kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 80 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 300µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 1 npn pre-biased, 1 pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 9 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is automotive, a grade of class. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum power of the product is 187mw. Moreover, it corresponds to nsvmun531335, a base product number of the product. The product is designated with the ear99 code number.

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MUN531335DW1 Complementary Bias Resistor Transistors. NPN R1=47k, R2=47k, PNP R1=2.2k, R2=47k(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Wire Qual 29/Aug/2019(PCN Assembly/Origin)
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MUN531335DW1(Datasheets)
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onsemi RoHS(Environmental Information)

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