onsemi MJ802G NPN Transistor, 30 A, 90 V, 2-Pin TO-204AA
Product Information
Minimum DC Current Gain:
25
Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
90 V
Maximum Emitter Base Voltage:
4 V
Package Type:
TO-204AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
30 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
30 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
90 V
Operating Temperature:
-65°C ~ 200°C (TJ)
Package / Case:
TO-204AA, TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 7.5A, 2V
edacadModel:
MJ802G Models
Frequency - Transition:
2MHz
Vce Saturation (Max) @ Ib, Ic:
800mV @ 750mA, 7.5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/921053
Transistor Type:
NPN
Package:
Tray
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
1mA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Power - Max:
200 W
Base Product Number:
MJ802
ECCN:
EAR99
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FAQs
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Yes. We ship MJ802G Internationally to many countries around the world.
This is NPN Transistor 30 A 90 V 2-Pin TO-204AA manufactured by onsemi. The manufacturer part number is MJ802G. It features up to 25 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. Additionally, it has 100 v maximum collector base voltage. Whereas features a 90 v of collector emitter voltage (max). It features a 4 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 30 a. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. The maximum collector current includes 30 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 90 v. The product has -65°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204aa, to-3. Furthermore, 25 @ 7.5a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 2mhz. The 800mv @ 750ma, 7.5a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 1ma (icbo) is the maximum current at collector cutoff. to-204 (to-3) is the supplier device package value. The maximum power of the product is 200 w. Moreover, it corresponds to mj802, a base product number of the product. The product is designated with the ear99 code number.
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