Toshiba, RN1103 NPN Digital Transistor, 100 mA 50 V 22 kΩ, Ratio Of 1, 3-Pin ESM
Product Information
Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
1.6 x 0.8 x 0.7mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
ESM
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
22 kΩ
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FAQs
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You can order Toshiba brand products with RN1103(F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship RN1103(F) Internationally to many countries around the world.
This is RN1103 NPN Digital Transistor 100 mA 50 V 22 kΩ Ratio Of 1 3-Pin ESM manufactured by Toshiba. The manufacturer part number is RN1103(F). It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.6 x 0.8 x 0.7mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). It features a 10 v of maximum emitter base voltage. The package is a sort of esm. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 22 kω input resistor .
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