ON Semiconductor SS9014ABU
Product Information
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
450 mW
Maximum Collector Emitter Voltage:
45 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
50 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
SS9014
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 100mA 270MHz 450mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 1mA, 5V
Transistor Type:
NPN
Frequency - Transition:
270MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
450mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship SS9014ABU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SS9014ABU. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 450 mw maximum power dissipation. Whereas features a 45 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has 50 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ss9014. It features bipolar (bjt) transistor npn 45v 100ma 270mhz 450mw through hole to-92-3. Furthermore, 60 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 270mhz. The 300mv @ 5ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 45v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 450mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 100ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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