ON Semiconductor SS8050CTA
Product Information
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
25 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Collector Base Voltage:
40 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
SS8050
Detailed Description:
Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 1W Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship SS8050CTA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SS8050CTA. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. Whereas features a 25 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.5 a. Additionally, it has 40 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: ss8050. It features bipolar (bjt) transistor npn 25v 1.5a 100mhz 1w through hole to-92-3. Furthermore, 120 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 500mv @ 80ma, 800ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 1.5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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