Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.96mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Voltage:
25 V
Maximum Emitter Base Voltage:
3 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Collector Base Voltage:
30 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
33 Weeks
Base Part Number:
KST10
Detailed Description:
RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3
Transistor Type:
NPN
Frequency - Transition:
650MHz
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KST10MTF. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 0.96mm. The product is available in surface mount configuration. Provides up to 350 mw maximum power dissipation. Whereas features a 25 v of collector emitter voltage (max). It features a 3 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 ma. Additionally, it has 30 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 33 weeks of manufacturer standard lead time. Base Part Number: kst10. It features rf transistor npn 25v 650mhz 350mw surface mount sot-23-3. The transition frequency of the product is 650mhz. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 350mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 60 @ 4ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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