Transistor Type:
NPN
Dimensions:
8.3 x 3.45 x 11.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
400 V
Maximum Operating Frequency:
0.1 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Collector Base Voltage:
700 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
KSE13003
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 500mA, 1.5A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce:
9 @ 500mA, 2V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSE13003H1ASTU. The transistor is a npn type. The given dimensions of the product include 8.3 x 3.45 x 11.2mm. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. Whereas features a 400 v of collector emitter voltage (max). It carries 0.1 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.5 a. Additionally, it has 700 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: kse13003. It features bipolar (bjt) transistor npn 400v 1.5a 4mhz 20w through hole to-126-3. The transition frequency of the product is 4mhz. The 3v @ 500ma, 1.5a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1.5a. Furthermore, 9 @ 500ma, 2v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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