Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.2 A
Maximum Collector Base Voltage:
-160 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSA1220
Detailed Description:
Bipolar (BJT) Transistor PNP 160V 1.2A 175MHz 1.2W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 300mA, 5V
Transistor Type:
PNP
Frequency - Transition:
175MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
1.2W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSA1220AYS. The transistor is a pnp type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. Whereas features a 160 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.2 a. Additionally, it has -160 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksa1220. It features bipolar (bjt) transistor pnp 160v 1.2a 175mhz 1.2w through hole to-126. Furthermore, 160 @ 300ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 175mhz. The 700mv @ 200ma, 1a is the maximum Vce saturation. to-126 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.2w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1.2a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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