ON Semiconductor BD239BTU
Product Information
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
0.7 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
90 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BD239
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 2A 30W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 1A, 4V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
300µA
Manufacturer:
ON Semiconductor
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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BD239BTU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BD239BTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14513930 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14513930.
Yes. We ship BD239BTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BD239BTU. The transistor is a npn type. The given dimensions of the product include 9.9 x 4.5 x 15.7mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The product has a maximum 0.7 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 90 v of collector emitter voltage (max). It features a 5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 2 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: bd239. It features bipolar (bjt) transistor npn 80v 2a 30w through hole to-220-3. Furthermore, 15 @ 1a, 4v is the minimum DC current gain at given voltage. The 700mv @ 200ma, 1a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 30w. Moreover, the product comes in to-220-3. The maximum collector current includes 2a. In addition, 300µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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