ON Semiconductor 2N5210TA
Product Information
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
30 (min) MHz
Maximum Emitter Base Voltage:
50 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
50 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N5210
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100µA, 5V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 1mA, 10mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship 2N5210TA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N5210TA. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It carries 30 (min) mhz of maximum operating frequency. It features a 50 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has 50 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2n5210. It features bipolar (bjt) transistor npn 50v 100ma 30mhz 625mw through hole to-92-3. Furthermore, 200 @ 100µa, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 700mv @ 1ma, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 100ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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