Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
0.3 V
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
300 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
0.95 V
Maximum Emitter Base Voltage:
6 V
Length:
5.2mm
Maximum DC Collector Current:
0.2 A
Pin Count:
3
Minimum DC Current Gain:
30
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
40 V
Height:
5.33mm
Minimum Operating Temperature:
-50 °C
Current - Collector (Ic) (Max):
200 mA
Transistor Type:
NPN
Mounting Type:
Through Hole
HTSUS:
0000.00.0000
Package:
Bulk
Current - Collector Cutoff (Max):
-
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Frequency - Transition:
300MHz
Voltage - Collector Emitter Breakdown (Max):
40 V
