Toshiba, RN1901(TE85L,F), Dual NPN Digital Transistor, 100 mA 50 V 4.7 kΩ, Ratio Of 1, 6-Pin US
Product Information
Base-Emitter Resistor:
4.7kΩ
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.9mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Minimum DC Current Gain:
30
Maximum Emitter Base Voltage:
10 V
Package Type:
US
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
4.7 kΩ
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This is Dual NPN Digital Transistor 100 mA 50 V 4.7 kΩ Ratio Of 1 6-Pin US manufactured by Toshiba. The manufacturer part number is RN1901(TE85L,F). It has about 4.7kω base-emitter resistor . The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). It features up to 30 of minimum DC current gain. It features a 10 v of maximum emitter base voltage. The package is a sort of us. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 1 resistor ratio . The product offers isolated transistor configuration. It has a maximum operating temperature of +150 °c. It contains 6 pins. Whereas, it has a typical 4.7 kω input resistor .
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