Infineon BDP 953 NPN Transistor, 3 A, 100 V SOT-223

BDP-953-H6327 Infineon BDP 953 NPN Transistor, 3 A, 100 V SOT-223
Infineon

Product Information

Minimum DC Current Gain:
15
Transistor Type:
NPN
Dimensions:
6.5 x 3.5 x 1.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
5 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Height:
1.6mm
Width:
3.5mm
Length:
6.5mm
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
5 V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is BDP 953 NPN Transistor 3 A 100 V SOT-223 manufactured by Infineon. The manufacturer part number is BDP 953 H6327. It features up to 15 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.5 x 3.5 x 1.6mm. The product is available in surface mount configuration. Provides up to 5 w maximum power dissipation. The product has a maximum 0.5 v collector emitter saturation voltage . Additionally, it has 120 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 1.3 v base emitter saturation voltage . In addition, the height is 1.6mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. The package is a sort of sot-223. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It features a 5 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration.

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BDP947/949/953 Silicon NPN Transistors(Technical Reference)

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