Diodes Inc ZXTD4591E6TA Dual NPN + PNP Transistor, 1 A, 60 V, 6-Pin SOT-23
Product Information
Minimum DC Current Gain:
100
Transistor Type:
NPN/PNP
Dimensions:
1.3 x 3 x 1.75mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.7 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
150 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
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FAQs
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You can order DiodesZetex brand products with ZXTD4591E6TA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc ZXTD4591E6TA Dual NPN + PNP Transistor, 1 A, 60 V, 6-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc ZXTD4591E6TA Dual NPN + PNP Transistor, 1 A, 60 V, 6-Pin SOT-23.
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Yes. We ship ZXTD4591E6TA Internationally to many countries around the world.
This is Diodes Inc Dual NPN + PNP Transistor 1 A 60 V 6-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is ZXTD4591E6TA. It features up to 100 of minimum DC current gain. The transistor is a npn/pnp type. The given dimensions of the product include 1.3 x 3 x 1.75mm. The product is available in surface mount configuration. Provides up to 1.7 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It carries 150 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 1 a. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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