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Fairchild MJE181STU NPN Transistor, 3 A, 60 V, 3-Pin TO-126

MJE181STU Fairchild  NPN Transistor, 3 A, 60 V, 3-Pin TO-126
MJE181STU
Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
12
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Saturation Voltage:
1.7 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Operating Frequency:
0.1 MHz
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 100mA, 1V
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
1.7V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126-3
Power - Max:
1.5 W
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Fairchild NPN Transistor 3 A 60 V 3-Pin TO-126 manufactured by Fairchild Semiconductor. The manufacturer part number is MJE181STU. It features up to 12 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 12.5 w maximum power dissipation. The product has a maximum 1.7 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It carries 0.1 mhz of maximum operating frequency. In addition, the height is 11mm. Furthermore, the product is 3.25mm wide. Its accurate length is 8mm. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It features a 7 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8542.39.0001. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 50 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 1.7v @ 600ma, 3a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. It is shipped in bulk package . In addition, 100µa (icbo) is the maximum current at collector cutoff. to-126-3 is the supplier device package value. The maximum power of the product is 1.5 w. The product is designated with the ear99 code number.

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MJE180/181/182, NPN Epitaxial Silicon Transistor, Low Power Audio Amplifier Low Current High Speed Switching Applications Data Sheet(Technical Reference)

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