Fairchild KSB1015YTU PNP Transistor, 3 A, 60 V, 3-Pin TO-220F

Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
10.16 x 2.54 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
-1 V
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
1 MHz
Height:
15.87mm
Width:
2.54mm
Length:
10.16mm
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
-7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 5V
Frequency - Transition:
9MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3
Power - Max:
25 W
ECCN:
EAR99
RoHs Compliant
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This is Fairchild PNP Transistor 3 A 60 V 3-Pin TO-220F manufactured by Fairchild Semiconductor. The manufacturer part number is KSB1015YTU. It features up to 20 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.16 x 2.54 x 15.87mm. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. The product has a maximum -1 v collector emitter saturation voltage . Additionally, it has -60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. In addition, the height is 15.87mm. Furthermore, the product is 2.54mm wide. Its accurate length is 10.16mm. The package is a sort of to-220f. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It features a -7 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8542.39.0001. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 100 @ 500ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 9mhz. The 1v @ 300ma, 3a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. It is shipped in bulk package . In addition, 100µa (icbo) is the maximum current at collector cutoff. to-220f-3 is the supplier device package value. The maximum power of the product is 25 w. The product is designated with the ear99 code number.

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KSB1015, PNP Epitaxial Silicon Transistor, Low Frequency Power Amplifier Data Sheet(Technical Reference)

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FAQs

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