Minimum DC Current Gain:
210
Transistor Type:
NPN
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
0.3 (Transistor1) V, 0.4 (Transistor2) V
Maximum Collector Base Voltage:
-25 V, 60 V
Maximum Collector Emitter Voltage:
20 V, 50 V
Maximum Base Emitter Saturation Voltage:
1.2 (Transistor 2) V
Maximum Operating Frequency:
150 MHz
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Package Type:
Mini6 G4 B
Number of Elements per Chip:
2
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
7 V, 12 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
