Infineon BFP640ESDH6327 NPN SiGe Bipolar Transistor, 0.05 A, 4.1 V, 4-Pin SOT-343
Product Information
Minimum DC Current Gain:
110
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Base Voltage:
4.8 V
Maximum Collector Emitter Voltage:
4.1 V
Maximum Operating Frequency:
45 GHz
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-343
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.05 A
Maximum Emitter Base Voltage:
0.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
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This is NPN SiGe Bipolar Transistor 0.05 A 4.1 V 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BFP640ESDH6327. It features up to 110 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Additionally, it has 4.8 v maximum collector base voltage. Whereas features a 4.1 v of collector emitter voltage (max). It carries 45 ghz of maximum operating frequency. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. The package is a sort of sot-343. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.05 a. It features a 0.5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.
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