Diodes Inc DMMT5401-7-F Dual PNP Transistor, 200 mA, 150 V, 6-Pin SOT-26
Product Information
Minimum DC Current Gain:
60
Transistor Type:
PNP
Dimensions:
3.1 x 1.7 x 1.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Base Voltage:
-160 V
Maximum Collector Emitter Voltage:
-150 V
Maximum Operating Frequency:
300 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-26
Number of Elements per Chip:
2
Maximum DC Collector Current:
-200 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
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FAQs
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You can order DiodesZetex brand products with DMMT5401-7-F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMMT5401-7-F Dual PNP Transistor, 200 mA, 150 V, 6-Pin SOT-26. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMMT5401-7-F Dual PNP Transistor, 200 mA, 150 V, 6-Pin SOT-26.
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Yes. We ship DMMT5401-7-F Internationally to many countries around the world.
This is Diodes Inc Dual PNP Transistor 200 mA 150 V 6-Pin SOT-26 manufactured by DiodesZetex. The manufacturer part number is DMMT5401-7-F. It features up to 60 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 3.1 x 1.7 x 1.3mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Additionally, it has -160 v maximum collector base voltage. Whereas features a -150 v of collector emitter voltage (max). It carries 300 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-26. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of -200 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
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