Minimum DC Current Gain:
60
Transistor Type:
PNP
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-1 V
Maximum Collector Base Voltage:
-120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Operating Frequency:
1 MHz
Height:
8mm
Width:
3.9mm
Length:
4.9mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.8 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Frequency - Transition:
120MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
120 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
900 mW
ECCN:
EAR99
