Infineon BFP740FESDH6327 NPN SiGe Bipolar Transistor, 0.045 A, 4.2 V, 4-Pin TSFP
Product Information
Minimum DC Current Gain:
160
Transistor Type:
NPN
Dimensions:
1.4 x 0.8 x 0.55mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
160 mW
Maximum Collector Base Voltage:
4.9 V
Maximum Collector Emitter Voltage:
4.2 V
Maximum Operating Frequency:
47 GHz
Height:
0.55mm
Width:
0.8mm
Length:
1.4mm
Package Type:
TSFP
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.045 A
Maximum Emitter Base Voltage:
0.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
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This is NPN SiGe Bipolar Transistor 0.045 A 4.2 V 4-Pin TSFP manufactured by Infineon. The manufacturer part number is BFP740FESDH6327. It features up to 160 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.4 x 0.8 x 0.55mm. The product is available in surface mount configuration. Provides up to 160 mw maximum power dissipation. Additionally, it has 4.9 v maximum collector base voltage. Whereas features a 4.2 v of collector emitter voltage (max). It carries 47 ghz of maximum operating frequency. In addition, the height is 0.55mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.4mm. The package is a sort of tsfp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.045 a. It features a 0.5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.
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