Diodes Inc LMN200B02-7 Dual PNP BJT + N-MOSFET, 200 mA, 50 V, 6-Pin SOT-363
Product Information
Transistor Type:
NPN + PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
200 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
200 mA
Maximum Collector Base Voltage:
-50 V
Pin Count:
6
Transistor Configuration:
N+P Loadswitch
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You will get a confirmation email regarding your order of Diodes Inc LMN200B02-7 Dual PNP BJT + N-MOSFET, 200 mA, 50 V, 6-Pin SOT-363. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc LMN200B02-7 Dual PNP BJT + N-MOSFET, 200 mA, 50 V, 6-Pin SOT-363.
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This is Diodes Inc Dual PNP BJT + N-MOSFET 200 mA 50 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is LMN200B02-7. The transistor is a npn + pnp type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It carries 200 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 200 ma. Additionally, it has -50 v maximum collector base voltage. It contains 6 pins. The product offers n+p loadswitch transistor configuration.
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