Infineon BFP 520F H6327 NPN Transistor, 0.05 A, 10 V, 4-Pin TSFP

BFP-520F-H6327 Infineon BFP 520F H6327 NPN Transistor, 0.05 A, 10 V, 4-Pin TSFP
Infineon

Product Information

Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
1.4 x 0.8 x 0.55mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
120 mW
Maximum Collector Base Voltage:
10 V
Maximum Collector Emitter Voltage:
10 V
Height:
0.55mm
Width:
0.8mm
Length:
1.4mm
Package Type:
TSFP
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.05 A
Maximum Emitter Base Voltage:
1 V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 0.05 A 10 V 4-Pin TSFP manufactured by Infineon. The manufacturer part number is BFP 520F H6327. It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.4 x 0.8 x 0.55mm. The product is available in surface mount configuration. Provides up to 120 mw maximum power dissipation. Additionally, it has 10 v maximum collector base voltage. Whereas features a 10 v of collector emitter voltage (max). In addition, the height is 0.55mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.4mm. The package is a sort of tsfp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.05 a. It features a 1 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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BFP520F, Low Noise Silicon Bipolar RF Transistor(Technical Reference)

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Yes. We ship BFP 520F H6327 Internationally to many countries around the world.