ON Semiconductor MJD45H11T4G

MJD45H11T4G ON Semiconductor
MJD45H11T4G
MJD45H11T4G
ET12262474
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
2.38 x 6.73 x 6.22mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.75 W
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
90 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
48 Weeks
Base Part Number:
MJD45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
90MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MJD45H11T4G. The transistor is a pnp type. The given dimensions of the product include 2.38 x 6.73 x 6.22mm. The product is available in surface mount configuration. Provides up to 1.75 w maximum power dissipation. Whereas features a 80 v of collector emitter voltage (max). It carries 90 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. It contains 3 pins. The product offers single transistor configuration. It has typical 48 weeks of manufacturer standard lead time. Base Part Number: mjd45. It features bipolar (bjt) transistor pnp 80v 8a 90mhz 1.75w surface mount dpak. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 90mhz. The 1v @ 400ma, 8a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 8a. In addition, 1µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Qualification Multiple Devices 24/Sep/2013(PCN Assembly/Origin)
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MJD44H11, MJD45H11(Datasheets)

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