ON Semiconductor SMMUN2211LT1G
Product Information
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
400 mW
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
SMMUN2211
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
10 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
246mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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Yes. We ship SMMUN2211LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SMMUN2211LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 400 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). The package is a sort of sot-23. It consists of 1 elements per chip. It contains 3 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. Base Part Number: smmun2211. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 246mw surface mount sot-23-3 (to-236). Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. Resistor - Base - 10 kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10 kohms. The maximum power of the product is 246mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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