Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Voltage:
400 V
Maximum Operating Frequency:
10 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Collector Base Voltage:
500 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
TIP50
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 1A 10MHz 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is TIP50G. The transistor is a npn type. The given dimensions of the product include 9.28 x 10.28 x 4.82mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Whereas features a 400 v of collector emitter voltage (max). It carries 10 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. Additionally, it has 500 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: tip50. It features bipolar (bjt) transistor npn 400v 1a 10mhz 2w through hole to-220ab. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 1v @ 200ma, 1a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 1a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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