ON Semiconductor MJB44H11T4G

MJB44H11T4G ON Semiconductor
MJB44H11T4G
MJB44H11T4G
ET12047787
ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
10.29 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Collector Base Voltage:
10 V dc
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
49 Weeks
Base Part Number:
MJB44
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 10A 50MHz 2W Surface Mount D²PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
D²PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJB44H11T4G. The transistor is a npn type. The given dimensions of the product include 10.29 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. Whereas features a 80 v of collector emitter voltage (max). It carries 20 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 10 a. Additionally, it has 10 v dc maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 49 weeks of manufacturer standard lead time. Base Part Number: mjb44. It features bipolar (bjt) transistor npn 80v 10a 50mhz 2w surface mount d²pak. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 50mhz. The 1v @ 400ma, 8a is the maximum Vce saturation. d²pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector current includes 10a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Qualification Wafer Site 20/Jun/2014(PCN Assembly/Origin)
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MJB(44,45)H11(Datasheets)
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Mult Devices 14/Jul/2019(PCN Design/Specification)
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Cancellation 13/Aug/2020(PCN Design/Specification)

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