ON Semiconductor NSVBC858CLT1G

NSVBC858CLT1G ON Semiconductor
NSVBC858CLT1G
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
-30 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
NSVBC858
Detailed Description:
Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300mW Surface Mount SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Supplier Device Package:
SOT-23
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NSVBC858CLT1G. The transistor is a pnp type. The given dimensions of the product include 3.04 x 2.64 x 1.11mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has -30 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 15 weeks of manufacturer standard lead time. Base Part Number: nsvbc858. It features bipolar (bjt) transistor pnp 30v 100ma 100mhz 300mw surface mount sot-23. Furthermore, 420 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 650mv @ 5ma, 100ma is the maximum Vce saturation. sot-23 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Compound Qual 14/Jun/2019(PCN Assembly/Origin)
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BC858CL Brief(Datasheets)
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BC856ALT1G Series(Datasheets)
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Pd-Coated Cu Wire Update 23/Sep/2015(PCN Design/Specification)
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SOT23 27/Sep/2016(PCN Design/Specification)

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