ON Semiconductor MUN2111T1G

MUN2111T1G ON Semiconductor
MUN2111T1G
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
2.9 x 1.5 x 1.09mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-346 (SC-59)
Number of Elements per Chip:
1
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MUN2111
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
10 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-59
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
230mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MUN2111T1G. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.5 x 1.09mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). The package is a sort of sot-346 (sc-59). It consists of 1 elements per chip. It contains 3 pins. The product offers single transistor configuration. Base Part Number: mun2111. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 230mw surface mount sc-59. Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. Resistor - Base - 10 kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sc-59 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10 kohms. The maximum power of the product is 230mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev 24/Apr/2020(PCN Assembly/Origin)
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Copper Wire 29/Oct/2009(PCN Design/Specification)
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MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3(Datasheets)

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