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Gate Drivers | Half And Full Bridge Gate Driver

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RE46C318S8F, Microchip

Piezoelectric Drivers, Microchip Piezoelectric and Haptic Drivers

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PVG612APBF, International Rectifier

Transistor Output - FET & MOSFET, Infineon The PDV13 series from Infineon is a single pole, normally open, solid-state replacement for electromechanical relays used for general purpose switching of analogue signals. It utilises Infineon HEXFET power MOSFET as the output switch, driven by an integrated circuit photovoltaic generator of novel construction. Bounce-Free Operation 1010 Off-State Resistance 1,000 V/μsec dv/dt 5 mA Input Sensitivity 4,000 VRMS I/O Isolation Solid-State Reliability

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1ED44173N01BXTSA1, Infineon

The Infineon single-channel low-side MOSFET gate driver IC is a low-voltage, power MOSFET non-inverting gate driver. Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output driver features a current buffer stage. The single-channel low-side MOSFET gate driver IC has OCP pin for over current protection sense and a FAULT status output. The EN/FLT needs to be outside pulled up to provide normal operation, pulling EN/FLT low disable the driver. Internal circuitry on VCC pin provides an under voltage lockout protection that holds output low until VCC supply voltage is within operating range. Single pin for fault output and enable Programmable fault clear time Under voltage lockout for MOSFETs CMOS Schmitt-triggered inputs Output in phase with input

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2ED21064S06JXUMA1, Infineon

The Infineon high-side and low-side gate driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. Negative voltage tolerance on inputs of –5 V Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis Dual package options of DSO-8 and DSO-14 High and low voltage pins separated for maximum creep age and clearance Separate logic and power ground with the 2ED21064S06J version RoHS compliant

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2ED21094S06JXUMA1, Infineon

The Infineon half bridge gate driver is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. Maximum supply voltage of 25 V Dual package options of DSO-8 and DSO-14 High and low voltage pins separated for maximum creep age and clearance Separate logic and power ground with the 2ED21094S06J version Shutdown input turns off both channels

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1EDN7116UXTSA1, Infineon

The Infineon Gate Drivers is a single-channel gate-driver which is IC optimized and having a high-performance system design with fast-switching transistors, including truly differential input. The gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the drivers reference potential as long as the common-mode voltage. High common-mode input voltage range High immunity to common-mode slew rate Active bootstrap clamping

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1EDN7136UXTSA1, Infineon

The Infineon Gate Drivers is a single-channel gate-driver which is IC optimized and having a high-performance system design with fast-switching transistors, including truly differential input. The gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the drivers reference potential as long as the common-mode voltage. High common-mode input voltage range High immunity to common-mode slew rate Active bootstrap clamping

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1EDN7146UXTSA1, Infineon

The Infineon Gate Drivers is a single-channel gate-driver which is IC optimized and having a high-performance system design with fast-switching transistors, including truly differential input. The gate driver output state is exclusively controlled by the voltage difference between the two inputs, independent of the drivers reference potential as long as the common-mode voltage. Regulated bootstrap voltage High immunity to common-mode slew rate Active bootstrap clamping

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2ED2410EMXUMA1, Infineon

The Infineon 2ED2410-EM is a one channel gate driver with two independent gate outputs for 12 / 24 V automotive applications. It offers several protection features for connecting/disconnecting loads or different power supplies. It has two bidirectional high-side analogue current sense interfaces with externally adjustable gain. Qualified for automotive applications Developed to support dependable power supply and distribution 3 Ω pull-down, 50 Ω pull-up for fast switch on/off

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Board 1 SKYPER 32 R, Semikron

SKYPER® 32 R & SKYPER® 32PRO R IGBT Module Adaptor Boards The Semikron Board 1 SKYPER® 32 R is an adaptor board for the IGBT driver module allowing customisation to suit the specific IGBT output module used. The switching characteristics of the IGBTs can be influenced through user selection of the appropriate RGon and RGoff components and it is also possible to adjust the monitoring level and blanking time for the Dynamic Short Circuit Protection function. The SKYPER® 32PRO R includes facilities for soft turn-off and an external error input. 122-0388 Board 1 SKYPER® 32 R is intended for use with driver module 687-5043 122-0389 Board 1 SKYPER® 32PRO R is intended for use with driver module 687-5049 Two output channels Failure management Collector-emitter voltage 1700V Peak output current 15A Dynamic short circuit protection

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IR2111STRPBF, Infineon

The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Gate drive supply range from 10 to 20V Under voltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set dead time High side output in phase with input

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IR21271STRPBF, Infineon

The Infineon current sensing single channel driver is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Floating channel designed for bootstrap operation Under voltage lockout 3.3V, 5V and 15V input logic compatible FAULT lead indicates shutdown has occurred

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