The Renesas M3xxx316 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 32Mbit. MRAM technology is analogous to flash technology with SRAM compatible 35ns/35ns and 45ns/45ns read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile. This makes MRAM a very reliable and fast non-volatile memory solution. MRAM is a true random-access memory
allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, virtually unlimited endurance and data retention, high performance and scalable memory technology.
Ideal for applications that must store and retrieve data without incurring large latency penalties Interface is Parallel Asynchronous x16 Technology used is 40nm pMTJ STT-MRAM Operating voltage range is 2.70V to 3.60V Package type is 48-ball FBGA (10mm x 10mm) RoHS compliant & REACH Compliant
