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Are your products FRAM Memory in stock?

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FRAM Memory Available Online With Efficient Delivery

New items

FM24V01A-G, Infineon

128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K ´ 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I 2C) Up to 3.4-MHz frequency[1] Direct hardware replacement for serial EEPROM Supports legacy timings for 100 kHz and 400 kHz Device ID Manufacturer ID and Product ID Low power consumption 175-A active current at 100 kHz 150-A standby current 8-A sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package

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FM31256-G, Cypress Semiconductor

F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface

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New items

CY15V104QSN-108SXI, Infineon

The Infineon Ultra Ferroelectric RAM is non volatile and performs reads and writes operations similar to a RAM. Data is written to the memory array immediately after each byte is successfully transferred to the device. This memory performs write operations at bus speed and having no write delays are incurred. Single and multi IO serial peripheral interface Low power consumption at high speed Dedicated 256 byte special sector Software block protection

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New items

FM18W08-SGTR, Infineon

The Infineon FRAM Memory is a 32 K ´ 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. RoHS compliant Low power consumption SRAM and EEPROM compatible Superior to battery backed SRAM modules Resistant to negative voltage undershoots

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New items

FM25640B-G, Cypress Semiconductor

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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New items

FM31L276-G, Cypress Semiconductor

F-RAM Processor Companion Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM Memory Real-time Clock (RTC) Low Voltage Reset Watchdog Timer Early Power-Fail Warning/NMI Two 16-bit Event Counters Serial Number with Write-lock for Security Battery-backed switchover Event Counter Tracking I²C interface

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New items

FM18W08-SG, Cypress Semiconductor

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption FRAM (Ferroelectric RAM) FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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New items

FM24V05-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption

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New items

FM25V01A-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption

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New items

FM24W256-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption

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New items

FM25W256-G, Infineon

F-RAM, Cypress Semiconductor Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption

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New items

CY15B108QN-40SXI, Cypress Semiconductor

Low power, 8-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

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