Automotive Standard:
No
Maximum Power Dissipation Pd:
75W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
50V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
BUZ11
Height:
16.51mm
Width:
4.83 mm
Length:
10.67mm
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
40mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
30A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
40mOhm @ 15A, 10V
title:
BUZ11-NR4941
Vgs(th) (Max) @ Id:
4V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
BUZ11-NR4941 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1954150
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
75W (Tc)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUZ11
ECCN:
EAR99
